| Authors |
Pecherskaya Ekaterina Anatolyevna, doctor of technical sciences, professor, sub-department of nanoand microelectronics,
Penza State University, E-mail: pea1@list.ru
Golovyashkin Aleksey Nikolayevich, candidate of technical sciences, associate professor, sub-department of nanoand microelectronics, Penza State University, E-mail: angpenza@gmail.com
Golovyashkin Aleksey Alekseyevich, postgraduate student, Penza State University, E-mail: angpenza@gmail.com
Zinchenko Timur Olegovich, undergraduate student, Penza State University, E-mail: scar0243@gmail.com
Pecherskiy Anatoly Vadimovich, doctor of technical sciences, professor, sub-department of nanoand microelectronics, Penza State University, E-mail: ura258@yandex.ru
Fimin Andrey Vladimirovich, undergraduate student, Penza State University, E-mail: andrey_fimin_pgu@mail.ru
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| Abstract |
Background. The current stage of development of nano- and microelectronics is connected with the use of active dielectrics, which find wide application in highly sensitive sensor equipment. The actual problem is an increase in the reproducibility of the properties of active dielectrics, the study of the influence of technological parameters on the reproducibility, which is the subject of this article.
Materials and methods. In the work, active dielectrics with ferroelectric and piezoelectric properties are investigated. The results
of an experimental study of the effect of X-ray radiation on the dependence of the relative permittivity on the electric field strength of triglycine sulfate samples are presented.
Results. The analytical description of the influence of technological parameters and various external factors (thermal, electric, magnetic, mechanical) on the properties of active dielectrics (relative permittivity, polarity) that define the use of materials in functional electronics
elements is presented. The expediency of using X-ray radiation to increase the reproducibilityof the di-electric parameters of hydrogen-containing ferroelectrics.
Conclusions. The increase in the reproducibility of the parameters is due to the presence of gently sloping sections in the dependence of the relative permittivity on the electric field strength ε (E) under the influence of X-ray radiation, and therefore the additional errors in the measurement of dielectric properties are substantially reduced due to the impossibility of fixing the exact values of the process parameters.
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